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Setup
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Procedure |
The characterization of the device is basically two steps. The first is an X-ray test. Line X-ray emitted from a radio-isotopes is a useful probe because the electrons created by photo-absorption process is usually localized within a few pixels . This can be used to check the charge transfer efficiency (CTE). If CTE is bad, the tail follows the X-ray event. We adjust the over-lap timing or voltage of the clocking until the obvious tail disappears. Fe55 is a popular isotope for the purpose.
The mean number of electrons generated by X-ray is known to E[eV]/3.65 where E is energy of the X-ray photon. Therefore, we can instantly obtain the Conversion Factor (CF: [e/ADU]) of the system. While we are searching for optimum condition of the operation where the readout noise is minimum, we change, for example, the drain bias of the on-chip FET. This causes change of amplifier responsivity [microV/e] which results in the change of CF. Instant measurement of the CF make the characterization process efficient. An example is shown here. Basic characteristics of the CCD such as dark current and amplifier noise are measured at this step.
The second step of the characterization is an optical test. We set the dewar on the QE measurement bench and measures the QE and the linearity of the amplifier.
Results
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List of CCDs |
| Vendor Name | ID |
Format | Thin | Installed in dewar? |
Optimized ? | Optical Test ? |
Done? |
Image |
Notes | |
| 1 | Loral | Loral1 | 2kX4k(15um) | No |
Yes |
Yes |
Not yet | Yes... |
Poor CTE under -60 C | |
| 2 | Loral | Loral2 | 2kX4k(15um) | No | Yes | Aborted | Output unstable. Hard to obtain bias level | |||
| 3 | HAMAMATSU | hamasmall | 384X384(15um) | No | Yes |
Yes |
Yes |
Yes |
Pilot device | |
| 4 | HAMAMATSU | W16C2 | 2kX4k(15um) | No | Yes |
Yes |
No |
No |
The first 2k4kCCD developed in Japan | |
| 5 | MIT/LL | W58C2 | 2kX4k(15um) | Yes | Yes |
Yes |
Yes |
Yes |
Setup grade(high-rho) | |
| 6 | MIT/LL | W6C1 | 2kX4k(15um) | Yes | Yes |
Yes |
Yes |
Yes |
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EPI |
| 7 | MIT/LL | W9C2 | 2kX4k(15um) | Yes | Not yet | EPI | ||||
| 8 | SITe | SI001S | 2kX4k(15um) | Yes | Yes |
Yes |
Yes |
Yes |
Grade3 | |
| 9 | SITe | SI002S | 2kX4k(15um) | Yes | Not yet | Grade3 | ||||
| 10 | SITe | SI003S | 2kX4k(15um) | Yes | Not yet | Grade3 | ||||
| 11 | SITe | SI004S | 2kX4k(15um) | Yes | Not yet | Grade3 | ||||
| 12 | SITe | SI005S | 2kX4k(15um) | Yes | Not yet | Grade3 | ||||
| 13 | SITe | SI006S | 2kX4k(15um) | Yes | Not yet | Grade3 | ||||
| 14 | EEV | EEV001S(A5286-3) | 2kX4k(13.5um) | Yes | Yes | Yes | Yes | Not Yet | ![]() |
Grade2 |
| 15 | EEV | EEV002S(A5354-4) | 2kX4k(13.5um) | Yes | Not yet | Grade2 | ||||
| 16 | EEV | EEV001E | 2kX4k(13.5um) | Yes | Yes |
Aborted |
Working Sample | |||
| 17 | HAMAMATSU | W21C1 | 2kX4k(15um) | No | Yes |
only B? | ||||
| 18 | HAMAMATSU | W11C2 | 2kX4k(15um) | No | Not yet | promising | ||||
| 19 | HAMAMATSU | W12C1 | 2kX4k(15um) | No | Not yet | promising | ||||
| 20 | HAMAMATSU | W18C1 | 2kX4k(15um) | No | Not yet | - | ||||
| 21 | HAMAMATSU | W5C2 | 2kX4k(15um) | No | Not yet | - | ||||
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Last update: 98/07/21 13:17